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Offering a basic introduction to physical principles of modern semiconductor devices and their advanced fabrication technology, this resource presents students with the theoretical and practical aspects of every step in device characterizations and fabrication, with an emphasis on integrated circuits. Divided into three parts, the text covers the basic properties of semiconductor materials, emphasizing silicon and gallium arsenide; the physics and characteristics of semiconductor devices; bipolar and unipolar special microwave and photonic devices; and the latest processing technologies, from crystal growth to lithographic pattern transfer.
作者簡介
S. M. Sze
S. M. Sze is UMC Chair Professor of the National Chiao Tung University and President of the National Nano Device Laboratories, Taiwan, R.O.C. For many years he was a member of the technical staff at Bell Laboratories. Professor Sze is the co-inventor of nonvolatile semiconductor memory. He has written numerous texts on device physics, including PHYSICS OF SEMICONDUCTOR DEVICES, considered a reference classic. In 1991, he received the IEEE J. J. Ebers award for his “fundamental and pioneering contributions to semiconductor devices.” He received his PhD in solid-state electronic from Stanford University in 1963.
「慶祝國立臺灣大學創校九十週年選輯」總序╱王泰升
Preface
CHAPTER 1 Introduction
1.1 Semiconductor Devices
1.2 Semiconductor Technology
Summary
PART I SEMICONDUCTOR PHYSICS
CHAPTER 2 Energy Bands and Carrier Concentration in Thermal Equilibrium
2.1 Semiconductor Materials
2.2 Basic Crystal Structure
2.3 Basic Crystal Growth Technique
2.4 Valence Bonds
2.5 Energy Bands
2.6 Intrinsic Carrier Concentration
2.7 Donors and Acceptors
Summary
CHAPTER 3 Carrier Transport Phenomena
3.1 Carrier Drift
3.2 Carrier Diffusion
3.3 Generation and Recombination Processes
3.4 Continuity Equation
3.5 Thermionic Emission Process
3.6 Tunneling Process
3.7 High-Field Effects
Summary
PART II SEMICONDUCTOR DEVICES
CHAPTER 4 p-n Junction
4.1 Basic Fabrication Steps
4.2 Thermal Equilibrium Condition
4.3 Depletion Region
4.4 Depletion Capacitance
4.5 Current-Voltage Characteristics
4.6 Charge Storage and Transient Behavior
4.7 Junction Breakdown
4.8 Heterojunction
Summary
CHAPTER 5 Bipolar Transistor and Related Devices
5.1 The Transistor Action
5.2 Static Characteristics of Bipolar Transistor
5.3 Frequency Response and Switching of Bipolar Transistor
5.4 The Heterojunction Bipolar Transistor
5.5 The Thyristor and Related Power Devices
Summary
CHAPTER 6 MOSFET and Related Devices
6.1 The MOS Diode
6.2 MOSFET Fundamentals
6.3 MOSFET Scaling
6.4 CMOS and BiCMOS
6.5 MOSFET on Insulator
6.6 MOS Memory Structures
6.7 The Power MOSFET
Summary
CHAPTER 7 MESFET and Related Devices
7.1 Metal-Semiconductor Contacts
7.2 MESFET
7.3 MODFET
Summary
CHAPTER 8 Microwave Diodes, Quantum-Effect, and Hot-Electron Devices
8.1 Basic Microwave Technology
8.2 Tunnel Diode
8.3 IMPATT Diode
8.4 Transferred-Electron Devices
8.5 Quantum-Effect Devices
8.6 Hot-Electron Devices
Summary
CHAPTER 9 Photonic Devices
9.1 Radiative Transitions and Optical Absorption
9.2 Light-Emitting Diodes
9.3 Semiconductor Laser
9.4 Photodetector
9.5 Solar Cell
Summary
PART III SEMICONDUCTOR TECHNOLOGY
CHAPTER 10 Crystal Growth and Epitaxy
10.1 Silicon Crystal Growth from the Melt
10.2 Silicon Float-Zone Process
10.3 GaAs Crystal-Growth Techniques
10.4 Material Characterization
10.5 Epitaxial-Growth Techniques
10.6 Structures and Defects in Epitaxial Layers
Summary
CHAPTER 11 Film Formation
11.1 Thermal Oxidation
11.2 Dielectric Deposition
11.3 Polysilicon Deposition
11.4 Metallization
Summary
CHAPTER 12 Lithography and Etching
12.1 Optical Lithography
12.2 Next-Generation Lithographic Methods
12.3 Wet Chemical Etching
12.4 Dry Etching 431
12.5 Microelectromechanical Systems 443
Summary
CHAPTER 13 Impurity Doping
13.1 Basic Diffusion Process
13.2 Extrinsic Diffusion
13.3 Diffusion-Related Processes
13.4 Range of Implanted Ions
13.5 Implant Damage and Annealing
13.6 Implantation-Related Processes
Summary
CHAPTER 14 Integrated Devices
14.1 Passive Components
14.2 Bipolar Technology
14.3 MOSFET Technology
14.4 MESFET Technology
14.5 Challenges for Microelectronics
Summary
APPENDIX A List of Symbols
APPENDIX B International Systems of Units (SI Units)
APPENDIX C Unit Prefixes
APPENDIX D Greek Alphabet
APPENDIX E Physical Constants
APPENDIX F Properties of Important Element and Binary Compound Semiconductors at 300 K
APPENDIX G Properties of Si and GaAs at 300 K
APPENDIX H Derivation of the Density of States in a Semiconductor
APPENDIX I Derivation of Recombination Rate for Indirect Recombination
APPENDIX J Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode
APPENDIX K Basic Kinetic Theory of Gases
APPENDIX L Answers to Selected Problems
Index
